Full PDF Text Transcription for KSD1692 (Reference)
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KSD1692. For precise diagrams, and layout, please refer to the original PDF.
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSD1692 TRANSISTOR (NPN) TO – 126 FEATURES z High DC Current Gain z Low Collecto...
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ANSISTOR (NPN) TO – 126 FEATURES z High DC Current Gain z Low Collector Saturation Voltage z High Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 150 100 8 3 1.25 100 150 -55~+150 1. EMITTER 2. COLLECTOR 3.
KSD1692 Datasheet
