JCST KSD1692
NPN Transistor
FEATURES
z High DC Current Gain z Low Collector Saturation Voltage z High Power DissipationMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 150 100 8 3 1.25 100 150 -55~+150 1. EMITTER 2. COLLECTOR 3. BASE Unit V V V A W ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage V(BR)CBO VCEO(SUS)* IC=1mA,IE=0 IC=30mA,IB=0 Emitter-base breakdown voltage V(BR)EBO IE=5mA,IC=0 Collector cut-off current ICBO VCB=100V,IE=0 Emitter cut-off current DC current gain Collect