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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
KSD1692 TRANSISTOR (NPN)
TO – 126
FEATURES
z High DC Current Gain z Low Collector Saturation Voltage z High Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 150 100
8 3 1.25 100 150 -55~+150
1. EMITTER
2. COLLECTOR
3.