FEATURES
z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection APPLICATIONS
TO-220-3L 1. ANODE 2. CATHODE 3. ANODE MAXIMUM RATINGS
( Ta=25℃ unless otherwise noted ) Symbol Parameter VRRM VRWM VR VR(RMS) IO IFSM Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current@ Tc=125℃ Non-Repetitive peak forward surge current 8.3ms half sine wave PD RΘJA Tj Tstg Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Value 125 87.5 20 120 2 50 125 -55~+150 Unit V V A A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=100μA 125 V Reverse current IR VR=12...
JCST