JCST NCE8205
N-Channel MOSFETS
| Part No. | NCE8205 |
|---|---|
| Datasheet | NCE8205 Download |
| Manufacturer |  JCST |
| Description | N-Channel MOSFETS |
| Buy | Stock & Price |
APPLICATIONS
Li-ion battery management applications SOT-23-6L Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation (note 1, Ta=25℃) Maximum Power Dissipation (note 2, Tc=25℃) Thermal Resistance from Junction to Ambient Thermal Resistance from Junction to Case Junction Temperature Storage Temperature Symbol VDS VGS ID PD RθJA RθJC TJ TSTG Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =18V,VGS = 0V Gate-source leakage current Drain-source on-resistance (note 3) Gate threshold voltage IGSS RDS(on) VGS(th) VGS =±10V,VDS = 0V VGS =4.5V,ID =6A VGS =2.5V,ID=5A VDS =VGS,ID =250µA Source-drain diode characteristics Forward on voltage (note 3) VSD IS=1.25A,VGS=0V Notes: 1. This test is performed with no heat sink at Ta=25℃. 2. This test is performed with infinite heat sink at Tc=25℃.