High-speed switching
1N4148M
Silicon Epitaxial Planar Switching Diode
ABA
C D Cathode Mark
DO-34
INCHES
MM
DIM
MIN MAX MIN MAX
A 1.083 --- 27.50 ---
B
--- 0.114 ---
2.90
C
--- 0.018 ---
0.45
D
--- 0.075 ---
1.90
Maximum Ratings (TA=25℃ unless otherwise noted)
Peak Reverse Voltage
Parameter
Symbol VRM
Value 60
Reverse Voltage
VR 50
Average Rectified Forward Current
IF(AV)
130
Surge Forward Current at t < 1 s
IFSM 500
Power Dissipation
Ptot 400 1)
Junction Tem.
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Features
* High-speed switching
1N4148M
Silicon Epitaxial Planar Switching Diode
ABA
C D Cathode Mark
DO-34
INCHES
MM
DIM
MIN MAX MIN MAX
A 1.083 --- 27.50 ---
B
--- 0.114 ---
2.90
C
--- 0.018 ---
0.45
D
--- 0.075 ---
1.90
Maximum Ratings (TA=25℃ unless otherwise noted)
Peak Reverse Voltage
Parameter
Symbol VRM
Value 60
Reverse Voltage
VR 50
Average Rectified Forward Current
IF(AV)
130
Surge Forward Current at t < 1 s
IFSM 500
Power Dissipation
Ptot 400 1)
Junction Temperature
Tj 200
Storage Temperature Range
Tstg - 65 to + 200
Note: 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
1N4148M Datasheet
