The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007
TRANSISTOR£¨NPN £© TO¡ª 220
FEATURES Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Fall time Storage time VCE(sat) VBE(sat) fT VCE=5 V, IC=5A IC=2A,IB=0.
3DD13007 Datasheet
