APPLICATIONS
* These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. LLDB3 / LLDB4 Silicon Bidirectional Trigger Diodes Cathode C B A DIM. A B C LL-34(MiniMELF) INCHES MM MIN MAX MIN MAX 0.134 0.142 3.40 3.60 0.008 0.016 0.20 0.40 0.055 0.059 1.40 1.50 ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Power Dissipation (Ta = 65 ℃) Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) Operating Junction and Storage Temperature Range Symbol Ptot ITRM TJ / Tstg Value 150 2 - 40 to + 125 Unit mW A ℃ ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Breakover Voltage at C = 22 nF, see diagram 1 Breakover Voltage Symmetry at C = 22 nF, see diagram 1 Dynamic Breakover Voltage at ΔI = [IBO to IF = 10 mA] Output Voltage See diagram 2 Breakover Current at C = 22 nF Leakage Current at VB = 0.5 VBO max Rise Time See diagram 3 LLDB3 LLDB4 Symbol VBO [|+VBO|-|-VBO|] | ΔV ± | VO IBO IB tr Min.
JGD
