JGD MM3Z2V2
Silicon Planar Zener Diodes
FEATURES
* Total power dissipation : max. 300 Mw * Small plastic package suitable for surface mounted design * Tolerance approximately ± 5%MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Power Dissipation Parameter Junction Temperature Storage Temperature Range MM3Z2V0 THRU MM3Z75 Silicon Planar Zener Diodes A C BD F G E H DIM. A B C D E F G H SOD-323 INCHES MIN 0.091 0.045 0.063 0.010 0.031 --0.004 --- MAX 0.110 0.053 0.071 0.016 0.043 0.006 0.020 0.004 MM MIN MAX 2.30 2.80 1.15 1.35 1.60 1.80 0.25 0.40 0.80 1.10 --- 0.15 0.10 0.50 --- 0.10 Symbol Ptot Tj TStg Value 300 150 - 55 to + 150 Unit mW ℃ ℃ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RθJA VF Max. 417 0.9 Unit ℃/W V Version: 6.1 MM3Z2V0 THRU MM3Z75 Silicon Planar Zener DiodesELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Type MM3Z2V0 MM3Z2V2 MM3Z2V4 MM3Z