RB551V-30
RB551V-30 is Silicon Epitaxial Planar Schottky Barrier Diode manufactured by JGD.
Features
- Small surface mounting type
- Ultra low VF
- High reliability
- High frequency rectification switching regulation
- Marking Code: "SA"
Silicon Epitaxial Planar Schottky Barrier Diode
B DE
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range
SOD-323F
INCHES
MIN MAX MIN MAX
Symbol VRM VR IO IFSM Tj Tstg
Value 30 20 0.5 2 125
- 40 to + 125
Unit V V A A ℃ ℃
Version: 6.1
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Silicon Epitaxial Planar Schottky Barrier Diode
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter Forward Voltage at IF = 100 m A at IF = 500 m A Reverse Current...
