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RB551V-30 - Silicon Epitaxial Planar Schottky Barrier Diode

Key Features

  • Small surface mounting type.
  • Ultra low VF.
  • High reliability.
  • High frequency rectification switching regulation.
  • Marking Code: "SA" RB551V-30 Silicon Epitaxial Planar Schottky Barrier Diode A C B DE G F Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc. ) Junction Temperature Storage Temperature Range SOD-323F INCHES MM DIM MIN MAX MIN MAX A 0.091.

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Datasheet Details

Part number RB551V-30
Manufacturer JGD
File Size 150.55 KB
Description Silicon Epitaxial Planar Schottky Barrier Diode
Datasheet download datasheet RB551V-30 Datasheet

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Features * Small surface mounting type * Ultra low VF * High reliability * High frequency rectification switching regulation * Marking Code: "SA" RB551V-30 Silicon Epitaxial Planar Schottky Barrier Diode A C B DE G F Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range SOD-323F INCHES MM DIM MIN MAX MIN MAX A 0.091 0.110 2.30 2.80 B 0.045 0.053 1.15 1.35 C 0.063 0.071 1.60 1.80 D 0.010 0.016 0.25 0.40 E 0.031 0.043 0.80 1.10 F 0.004 0.006 0.10 0.15 G 0.016 0.024 0.41 0.61 Symbol VRM VR IO IFSM Tj Tstg Value 30 20 0.5 2 125 - 40 to + 125 Unit V V A A ℃ ℃ Version: 6.1 www.jgdsemi.