JGD RB751V-40
Silicon Epitaxial Planar Schottky Barrier Diode
| Part No. | RB751V-40 |
|---|---|
| Datasheet | RB751V-40 Download |
| Manufacturer |  JGD |
| Description | Silicon Epitaxial Planar Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
* Small surface mounting type * Low reverse current and low forward voltage * High reliability * High speed switching * Marking Code: "S8" RB751V-40 Silicon Epitaxial Planar Schottky Barrier Diode A C B DE G FMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range SOD-323F INCHES MM DIM MIN MAX MIN MAX A 0.091 0.110 2.30 2.80 B 0.045 0.053 1.15 1.35 C 0.063 0.071 1.60 1.80 D 0.010 0.016 0.25 0.40 E 0.031 0.043 0.80 1.10 F 0.004 0.006 0.10 0.15 G 0.016 0.024 0.41 0.61 Symbol VRM VR IO IFSM Tj Tstg Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA ℃ ℃ Version: 6.1 RB751V-40 Silicon Epitaxial Planar Schottky Barrier DiodeELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Cap
