Marking Code: "S8"
RB751V-40
Silicon Epitaxial Planar Schottky Barrier Diode
A C
B DE
G F
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc. ) Junction Temperature Storage Temperature Range
SOD-323F
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.091.
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Features
* Small surface mounting type * Low reverse current and low forward voltage * High reliability * High speed switching * Marking Code: "S8"
RB751V-40
Silicon Epitaxial Planar Schottky Barrier Diode
A C
B DE
G F
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range
SOD-323F
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.091
0.110
2.30
2.80
B
0.045
0.053
1.15
1.35
C
0.063
0.071
1.60
1.80
D
0.010
0.016
0.25
0.40
E
0.031
0.043
0.80
1.10
F
0.004
0.006
0.10
0.15
G
0.016
0.024
0.41
0.61
Symbol VRM VR IO IFSM Tj Tstg
Value 40 30 30 200 125
- 40 to + 125
Unit V V mA mA ℃ ℃
Version: 6.1
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RB751V-40 Datasheet
