JGD ZMPTZ33B
Silicon Epitaxial Planar Zener Diodes
FEATURES
* Small surface mounting type * 1 W of power can be obtained despite compact size * High surge withstand level * Voltage regulation and voltage limiting * Voltage surge absorption ZMPTZ3V6B THRU ZMPTZ36B Silicon Epitaxial Planar Zener Diodes Cathode C B A LL-41 INCHES MM DIM MIN MAX MIN MAX A 0.189 0.205 4.80 5.20 B 0.012 0.020 0.30 0.50 C 0.093 0.100 2.35 2.55ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj Tstg Value 1 150 - 55 to + 150 Unit W ℃ ℃ Version: 6.1 ZMPTZ3V6B THRU ZMPTZ36B Silicon Epitaxial Planar Zener DiodesELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Type ZMPTZ3V6B ZMPTZ3V9B ZMPTZ4V3B ZMPTZ4V7B ZMPTZ5V1B ZMPTZ5V6B ZMPTZ6V2B ZMPTZ6V8B ZMPTZ7V5B ZMPTZ8V2B ZMPTZ9V1B ZMPTZ10B ZMPTZ11B ZMPTZ12B ZMPTZ13B ZMPTZ15B ZMPTZ16B ZMPTZ18B ZMPTZ20B ZMPTZ22B ZMPTZ24B ZMPTZ27B ZMPTZ30B ZMPTZ33B ZMPTZ36B Min. (V