Datasheet Details
| Part number | CJP10N60 |
|---|---|
| Manufacturer | JIANGSU CHANGJIANG |
| File Size | 559.76 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 CJP10N60 Datasheet
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General Description
The C JP10N60/CJPF10N60 is a high volt age and high current power MOSFET , design ed to ha ve c haracteristics, such as fast switching time, low gate charge, lo w on-st ate resist ance and have rugged avalanche characteristics.
Key Features
- z Low Crss z Fast Switching z 100% avalanche tested 2.Drain TO-220-3L/TO-220F 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID 10 PD 2 RθJA 62.5 TJ Tstg -50 150 ~+150 Value 600 V ±30 A W ℃/W ℃ Unit C,Mar,2014 http://www. Datasheet4U. com Electrical charact.