CJP75N80
Overview
The CJ75N80 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications.
- DRAIN
- SOURCE 123 Single Pulsed Avalanche Energy(note2) Thermal Resistance, Junction-to-Ambient Storage Temperature Junction Temperature Notes
- Repetitive Rating: Pulse width limited by maximum junction temperature
- EAS condition: Tj=25℃ , VDD=37.5V,VG=10V,L=0.5mH,ID=20A
- This test is performed with no heat sink at Ta=25℃
- This test is performed with infinite heat sink at Tc=25℃ B,Dec,2011 Free Datasheet
