JieJie Microelectronics 130P04A
P-channel Enhancement Mode Power MOSFET
DESCRIPTION
JMT P-channel Enhancement Mode Power MOSFETFEATURES
● VDS= -40V, ID= -40A RDS(ON) < 14.3mΩ @ VGS = -10V RDS(ON) < 22mΩ @ VGS = -4.5V● Advanced Trench Technology
● Excellent RDS(ON) and Low Gate Charge
● Lead free product is acquired Application
● PWM
APPLICATIONS
● Load Switch● Power Management 100% UIS TESTED! 100% ΔVds TESTED! SOP-8 top view Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE 130P04A JMTP130P04A TAPING Device Package SOP-8 Reel Size 13inch Reel (PCS) 4000 Per Carton (PCS) 48000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise specified) Symbol VDSS VGSS ID IDM EAS PD RθJA TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 TA = 25℃ TA = 100℃ Single Pulsed Avalanche Energy note2 Power Dissipation TA = 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Max. -40 ±20 -40 -26 -160 144 40 3.1 -55 to +15...