JieJie Microelectronics 9435
P-channel Enhancement Mode Power MOSFET
DESCRIPTION
JMT P-channel Enhancement Mode Power MOSFETFEATURES
● VDS= -30V, ID= -5.1A RDS(ON) <55mΩ @ VGS = -10V RDS(ON) <90mΩ @ VGS = -4.5V● Advanced Trench Technology
● Excellent RDS(ON) and Low Gate Charge
● Lead free product is acquired Application
● PWM
APPLICATIONS
● Load Switch● Power Management SOP-8 top view Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking 9435 Device JMTP9435A OUTLINE TAPING Device Package SOP-8 Reel Size 13inch Reel (PCS) 4000 Per Carton (PCS) 48000
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise specified) Symbol VDSS VGSS ID IDM PD RθJA TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 TA = 25℃ TA = 100℃ Power Dissipation TA = 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Max. -30 ±20 -5.1 -3.3 -20.4 2.15 58 -55 to +150 Units V V A A A W ℃/W ℃ JieJie Microelectronics CO. , Ltd -1- Version :1.0 JMTP9435AELECTRICAL CHARACTERISTICS
(TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min.