G320N10A Overview
JMT N-channel Enhancement Mode Power MOSFET.
G320N10A Key Features
- 100V, 28A RDS(ON) <30mΩ @ VGS = 10V RDS(ON) <33.8mΩ @ VGS = 4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free
- Load Switch
- PWM Application
- Power Management