G320N10A Datasheet PDF

DESCRIPTION

JMT N-channel Enhancement Mode Power MOSFET

FEATURES

● 100V, 28A RDS(ON) <30mΩ @ VGS = 10V RDS(ON) <33.8mΩ @ VGS = 4.5V
● Advanced Trench Technology
● Provide Excellent RDS(ON) and Low Gate Charge
● Lead Free Application
● Load Switch
● PWM Application
● Power Management 100% UIS TESTED! 100% ΔVds TESTED! PDFN5x6-8L Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking G320N10A Device JMTG320N10A Outline TAPING Package PDFN5x6-8L Reel Size 13” Reel (pcs) 2500 Per Carton (pcs) 25000

ABSOLUTE MAXIMUM RATINGS

(TC=25℃ unless otherwise specified) Symbol VDSS VGSS ID IDM EAS PD RθJC TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Power Dissipation TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range Max. 100 ±20 28 18 112 52.6 45 2.8 -55 to +150 Units V V A A A mJ W ℃/W ℃ JieJie Micr...