JieJie Microelectronics JMSH1003NE
This single-pulse measurement was taken under TJ_Max = 150°C. The power dissipation PD is based on TJ_Max = 150°C.| Part No. | JMSH1003NE |
|---|---|
| Datasheet | JMSH1003NE Download |
| Manufacturer |  JieJie Microelectronics |
| Description | N-Ch Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Ultra-low RDS(ON)● Low Gate Charge
● 100% UIS Tested, 100% Rg Tested
● Pb-free Lead Plating
● Halogen-free and RoHS-compliant Product Summary Parameter VDS VGS(th) ID (@ VGS = 10V) (1) RDS(ON) (@ VGS = 10V) Value 100 3.0 215 3.0 Unit V V A m
APPLICATIONS
● Motor Driving in Power Tool, E-vehicle, Robotics● Current Switching in DC/DC & AC/DC (SR) Sub-systems
● Power Management in Telecom., Industrial Automation, CE TO-220-3L Top View GDS TO-263-3L Top View D G S D G S Ordering Information Device JMSH1003NC-U JMSH1003NE-13 Package TO-220-3L TO-263-3L # of Pins 3 3 Marking SH1003N SH1003N
ABSOLUTE MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) MSL N/A 1 TJ (°C) -55 to 150 -55 to 150 Media Quantity (pcs) Tube 50 13-inch Reel 1000 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (1) TC = 25°C TC = 100°C Pulsed Drain Current (2) Avalanche Energy (3) Power Dissipation (4) TC = 25°C TC = 100°C Junction & Storage Temperature Range Symbol VDS VGS ID IDM EAS PD TJ, TSTG Value 100 ±20 215 136 689 726 312 125 -55 to 150 Unit V V A A mJ W °C RDS(ON) (m) VGS (V) 20 15 10 5 0 0 RDS(ON) vs.
