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JMTK170N10A - N-channel Enhancement Mode Power MOSFET

General Description

JMT N-channel Enhancement Mode Power MOSFET

Key Features

  • 100V,59A RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JMTK170N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V,59A RDS(ON)<20mΩ @ VGS =10V  Advanced Trench Technology  Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired Application  Load Switch  PWM Application  Power management 100% UIS TESTED! 100% ΔVds TESTED! TO-252-4R(DPAK) top view Marking and pin Assignment Schematic Diagram Package Marking and Ordering Information Device Marking Device OUTLINE Device Package JMTK170N10A JMTK170N10A TAPING TO-252-4R TUBE (PCS) 13inch Inner BOX (PCS) 2500 Per Carton (PCS) 25000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol VDSS VGSS ID IDM EAS PD RθJC TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25℃ TC = 100℃ Pulse