JMTP160P03D
Description
JMT Dual P-channel Enhancement Mode Power MOSFET.
Key Features
- VDS= -30V, ID= -11A RDS(ON) <17mΩ @ VGS = -10V RDS(ON) < 27mΩ @ VGS = -4.5V
- Advanced Trench Technology
- Excellent RDS(ON) and Low Gate Charge
- Lead free product is acquired
Applications
- PWM Applications
