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JMTP9926A - Dual N-channel Enhancement Mode Power MOSFET

General Description

JMT Dual N-channel Enhancement Mode Power MOSFET

Key Features

  • 20V, 6.5A RDS(ON) < 17mΩ @ VGS = 4.5V RDS(ON) < 21mΩ @ VGS = 2.5V.
  • Advanced Trench Technology.
  • Excellent RDS(ON) and Low Gate Charge.
  • Lead Free.

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Full PDF Text Transcription (Reference)

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JMTP9926A Description JMT Dual N-channel Enhancement Mode Power MOSFET Features  20V, 6.5A RDS(ON) < 17mΩ @ VGS = 4.5V RDS(ON) < 21mΩ @ VGS = 2.