JST26Z
DESCRIPTION
:
JST26Z provide high dv/dt rate with strong resistance to electromagnetic interface. With high mutation performances, 3 quadrants products especially remended for use on inductive load. JST26Z provide insulation voltage rated at 2500V RMS from all three terminals to external heatsink plying with UL standards (File ref: E252906).
MAIN FEATURES
123 TO-3P Insulated
T1(1) G(3)
Symbol IT(RMS) VDRM /VRRM
Value 25
600 and 800 and 1200
Unit A V
T2(2)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (Tj=25℃) Repetitive peak reverse voltage (Tj=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
RMS on-state current
TO-3P(Ins) (TC=100℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state...
