Q120N03A
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
- 30V, 18A RDS(ON)<13mΩ @ VGS =10V RDS(ON)<22.5mΩ @ VGS =4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead free product is acquired
Application
- Load Switch
- PWM Application
- Power management
100% UIS TESTED! 100% ΔVds TESTED!
PDFN3x3-8L
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
OUTLINE
Q120N03A JMTQ120N03A TAPING
Device Package
PDFN3x3-8L
Reel Size 13inch
Reel (PCS)
Per Carton (PCS)
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol VDSS VGSS
PD RθJC TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC = 25℃ TC = 100℃
Pulsed Drain Current note1
Single Pulsed Avalanche Energy...
