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SH1018AQ Datasheet PDF

JieJie Microelectronics SH1018AQ

This single-pulse measurement was taken under TJ_Max = 175°C. This single-pulse measurement was taken under the following condition [L = 100 H, VGS = 10V, VDS = 100V] while its value is limited by TJ_Max = 175°C.
Part No. SH1018AQ
Datasheet SH1018AQ Download
Manufacturer
JieJie Microelectronics
Description N-Ch Power MOSFET
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SH1018AQ datasheet page 1 preview

FEATURES

● Low ON-resistance, RDS(ON)
● Low Gate Charge, Qg
● 100% UIS and Rg Tested
● Pb-free Lead Plating
● Halogen-free and RoHS-compliant
● AEC-Q101 Qualified for Automotive

APPLICATIONS

Top View PDFN5x6-8L Bottom View Product Summary Parameter VDS VGS(th)_Typ ID (@ VGS = 10V) (1) RDS(ON)_Typ (@ VGS = 10V) Value 100 2.7 45 15.8 Unit V V A m Pin Configuration Top View D 1 8 2 7 G 3 6 4 5 S Ordering Information Device JMSH1018AGQ-13 Package PDFN5x6-8L # of Pins 8 Marking SH1018AQ MSL 1 TJ (°C) Media Quantity (pcs) -55 to 175 13-inch Reel 5000

ABSOLUTE MAXIMUM RATINGS

(@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (1) TC = 25°C TC = 100°C Pulsed Drain Current (2) Avalanche Current (3) Avalanche Energy (3) Power Dissipation (4) TC = 25°C TC = 100°C Junction & Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS PD TJ, TSTG Value 100 ±20 45 32 181 28 39 88 44 -55 to 175 Unit V V A A A mJ W °C RDS(ON) (m) VGS (V) 50 ID = 20A 40 30 20 10 0 2 4 Rev.
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