3DD5032 Datasheet | JILIN SINO-MICROELECTRONICS

FEATURES z 3DD5032 is high breakdown µÈÐ- çÂ- EQUIVALENT CIRCUIT voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, triple diffused process etc, adoption of fully plastic packge. ,²É ¶©»õÐÅÏ¢ ¶© »õ ÐÍ ORDER MESSAGE ºÅ Ó¡ ¼Ç ÎÞ±ËØ Halogen Free - ñ - ñ NO NO - â ×° Order codes 3DD5032-O-A-N-D 3DD5032-Y-O-A-B-D Marking D5032 D5032 Package TO-3P(H)IS RBE=50¦¸ °ü (Typ.) ×° Æ÷¼þÖØÁ¿ Device Weight 5.50 g(typ) 5.50 g(typ) Packaging ÅÝÄÅÝÄFoam Foam TO-3P(H)IS-Y Ó¡¼Ç˵Ã÷ MARKING É̱ê ÐͺŠ.. Trademark Part No. Year month For example 8¡±£2008£¬¡° 10¡± ÄêÔ ¾ÙÀý ¡° 10 Ô october °æ±¾£º 200911G 1/7 ABSOLUTE RATINGS (Tc=25¡æ Ïî Ä¿ Parameter ) ¾ø¶Ô×î´ó ¨Öµ û- ºÅ Symbol Êý µÖ Value 1500 600 6 8 16 4 50 150 µ- »Î Unit V V V A A W ¼¯µç¼« - »ù¼«Ö±Á÷µçѹ Collector- Base Voltage ¼¯µç¼« - - ¢É伫ֱÁ÷µçѹ Collector- Emitter Voltage - ¢É伫 - »ù¼«Ö±Á÷µçѹ Emitter- Base Voltage ×î´ó¼¯µç¼«µçÁ÷ Collector Current Ö±Á÷ Âö³å DC BVCBO BVCEO...