3DD5040 Datasheet | JILIN SINO-MICROELECTRONICS

FEATURES z 3DD5040 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, µÈÐ- çÂ- EQUIVALENT CIRCUIT ,²É »- ±£ triple diffused process etc., adoption of fully plastic packge. Ro HS product. ¶©»õÐÅÏ¢ ¶© »õ ÐÍ ORDER MESSAGE ºÅ Ó¡ ¼Ç ÎÞ±ËØ Halogen Free - ñ NO - â ×° °ü ×° Packaging ÅÝÄFoam Æ÷¼þÖØÁ¿ Device Weight 5.50 g(typ) Order codes 3DD5040-O-A-N-D Marking D5040 Package TO-3P(H)IS Ó¡¼Ç˵Ã÷ MARKING É̱ê ÐͺŠÄêÔ .. Trademark Part No. Year month For example 8¡±£2008£¬¡° 10¡± ¾ÙÀý ¡° 10 Ô october °æ±¾£º 200911E 1/6 ABSOLUTE RATINGS (Tc=25¡æ Ïî Ä¿ Parameter ¾ø¶Ô×î´ó ¨Öµ ) Êý µÖ Value 1700 750 6 22 44 11 75 150 ¡æ ¡æ -55~+150 µ- »Î Unit V V V A A W û- ºÅ Symbol ¼¯µç¼« - »ù¼«Ö±Á÷µçѹ Collector- Base Voltage ¼¯µç¼« - - ¢É伫ֱÁ÷µçѹ Collector- Emitter Voltage - ¢É伫 - »ù¼«Ö±Á÷µçѹ Emitter- Base Voltage ×î´ó¼¯µç¼«µçÁ÷ Collector Current Ö±Á÷ Âö³å DC BVCBO BVCEO BVEBO Pulse IC ICP IB PC Tj TSTG ×î´ó»ù¼«Ö±Á÷µ...