JCS2N70H Description
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS2N70H 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson-max （Vgs=10V） Qg-typ 用途 高频开关电源 电子镇流器 UPS 电源 2A 700 V 6.5 Ω 8.0nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 Crss (典型值 5pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS2N70H Key Features
- Low gate charge -Low Crss (typical 5pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
- pulse （note 1）
- 55～+150
- 漏极电流由最高结温限制-Drain current limited by maximum junction temperature
- 100 μA
- 100 nA
- 100 nA
- 6.0 6.5 Ω
- 281 359 pF
- 35 44 pF