JCS4N60VB Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60B 主要参数 MAIN CHARACTERISTICS 封装 Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC 用途 高频开关电源 电子镇流器 LED 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplies 产品特性 低栅极电荷 低 Crss (典型值 2.69pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS4N60VB Key Features
- Low gate charge -Low Crss (typical 2.69pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS prod
- 55～+150
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- Coefficient
- 100 μA
- 100 nA
- 100 nA
- 1.7 2.4
