JCS630SA Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS630A 主要参数 MAIN CHARACTERISTICS 封装 Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS 产品特性 z低栅极电荷 z低 Crss (典型值 22pF) z开关速度快 z产品全部经过雪崩测试 z高抗 dv/dt 能力 zRoHS.
JCS630SA Key Features
- pulse （note 1）
- 55～+150
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- 100 μA
- 100 nA
- 100 nA
- 0.34 0.4 Ω
- 550 720 pF
- 85 110 pF
- 22 29 pF