JCS6N90BH Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS6N90H 主要参数 MAIN ID VDSS Rdson-max （@Vgs=10V） Qg-typ CHARACTERISTICS 6A 900 V 3.0 Ω 14 nC 封装 Package 用途 高频开关电源 电子镇流器 UPS 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 Crss (典型值 9pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS6N90BH Key Features
- Low gate charge -Low Crss (typical 9pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS product
- Derate
- 55～+150
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- 100 nA
- 100 nA
- 2.6 3.0 Ω
- 1320 1716 pF
- 105 136 pF
