3CT12B
Description
阴极
阳极
门极
TO-220C
产品特性
- 玻璃钝化芯片，高可靠性和一致性
- 低通态电流和高浪涌电流能力
- 环保 Ro HS 产品
FEATURES
- Glass-passivated mesa chip for reliability and uniform
- Low on-state voltage and High ITSM
- Ro HS products
TO-263
订货信息 ORDER MESSAGE
订货型号 Order codes 3CT12B-O-C-N-C 3CT12B-O-C-N-B 3CT12B-O-S-B-B
印记 Marking 3CT12B 3CT12B 3CT12B
无卤素 Halogen Free
含卤 含卤 含卤
封装 Package TO-220C TO-220C TO-263
包装 Packaging 袋装 Bag 条管 Tube 条管 Tube
版本：201510F
1/5
R 3CT12B
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
项目 Parameter 断态重复峰值电压 Repetitive peak off-state voltage 反向重复峰值电压 Repetitive peak reverse voltage 通态平均电流 Average on-state current ( half sine wave) 通态方均根电流 On-state RMS current ( all conduction angles ) 非重复浪涌峰值通态电流 Non- repetitive surge peak on-state current ( half sine wave ,t=10ms) I2t for fusing ( t=10ms) 门极峰值电流 Peak gate current 门极峰值电压 Peak gate voltage 反向门极峰值电压 Peak reverses gate voltage 门极峰值功率 Peak gate power 门极平均功率 Average gate power ( over any 20ms period ) 存储温度 Storage temperature 操作结温...
