3DG9013 - NPN EPITAXIAL SILICON TRANSISTOR

JILIN SINO

General Description

of Changes 2015-4-30 201504A ：201504A 5/5

Key Features

z Epitaxial silicon z High switching speed z Complementary to 3DG9012 z RoHS product TO-92 ORDER.

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3DG9013 npn epitaxial silicon transistor by JILIN SINO - Datasheet Preview

Datasheet Details

Part number	3DG9013
Manufacturer	JILIN SINO
File Size	169.57 KB
Description	NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	3DG9013 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN NPN EPITAXIAL SILICON TRANSISTOR R 3DG9013 MAIN CHARACTERISTICS Package IC VCEO PC 500mA 20V 625mW APPLICATIONS z z High frequency switching power supply z z High frequency power transform z z Commonly power amplifier circuit z z z 3DG9012 z（RoHS） FEATURES z Epitaxial silicon z High switching speed z Complementary to 3DG9012 z RoHS product TO-92 ORDER MESSAGE Order codes Marking 3DG9013-O-T-N-C 3DG9013-O-T-N-A 9013 9013 Halogen Free NO NO Package TO-92 TO-92 Packaging Bag Brede ：201504A 1/5 R ABSOLUTE RATINGS (Tc=25℃) — — — Parameter Collector- Base Voltage（ IE=0） Collector- Emitter Voltage（IB=0） Emitter-Base Voltage（IC=0） Collector Current（DC） Total Dissipation (TO-92) Junction Temperature Storage Temperature 3DG9013 Symbol VCBO