• Part: ATT060U060EQ
  • Manufacturer: JILIN SINO
  • Size: 1.02 MB
Download ATT060U060EQ Datasheet PDF
ATT060U060EQ page 2
Page 2
ATT060U060EQ page 3
Page 3

ATT060U060EQ Description

N 沟绝缘栅双极晶体管 N-CHANNEL IGBT R ATT060U060EQ 主要参数 MAIN CHARACTERISTICS 封装 Package IC VCES Vcesat-ty(p Vge=15V) 60 A 600V 1.9V 用途 焊接 PFC 车载充电器 APPLICATIONS Welding converters Power Factor Correction OBC 产品特性 低栅极电荷 Trench FS 技术, RoHS.

ATT060U060EQ Key Features

  • Low gate charge -Trench FS Technology, -RoHS product
  • 连续集电极电流 Collector Current-continuous
  • pulse (note 1) 二极管正向测试电流 Diode RMS forward current 二极管正向脉冲电流 Diode pulse current 最高栅极发射极电压 Gate-Emmiter Voltage 最高瞬态栅极发射
  • PD TC=25℃
  • 连续集电极电流由最高结温限制 -Collector current limited by maximum junction temperature
  • 55~+175
  • 200 nA
  • 200 nA
  • Collector-Emmiter saturation Voltage VCESAT VGE=15V , IC=60A,TC=175℃
  • 动态特性 Dynamic Characteristics