JCS12N65EI Overview
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS12N65EI 主要参数MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson-max （Vgs=10V） Qg-Typ 12A 650V 0.9Ω 30nC 用途 高频开关电源 电子镇流器 LED 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplies 产品特性 低栅极电荷 低 Crss (典型值 15.4pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS12N65EI Key Features
- Low gate charge -Low Crss (typical 15.4pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS prod
- pulse（note 1）
- Derate
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- VDS=0V, VGS =30V
- 100 μA
- 100 nA
- 100 nA
- 0.73 0.9 Ω