JCS2N65MB Description
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS2N65B 主要参数 MAIN CHARACTERISTICS ID 2.0 A VDSS 650 V Rdson（Vgs=10V） -MAX 5.0 Ω Qg-typ 5.8 nC 用途 高频开关电源 电子镇流器 LED 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplies 产品特性 低栅极电荷 低Crss (典型值 2.2pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS2N65MB Key Features
- Low gate charge -Low Crss (typical 2.2pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability -RoHS produ
- pulse IDM
- Derate
- 55～+150
- 漏极电流由最高结温限制
- Drain current limited by maximum junction temperature
- 100 μA
- 100 nA
- 100 nA
- 3.9 5.0 Ω