JT020N065SED Overview
N 沟绝缘栅双极晶体管 N-CHANNEL IGBT R JT020N065SED/CED/WED/FED 主要参数 MAIN CHARACTERISTICS 封装 Package IC BVCES VCESAT-typ （VGE=15V） 20 A 650V 1.6V 用途 逆变器 UPS 电源 APPLICATIONS General purpose inverters UPS TO-263 产品特性 低栅极电荷 Trench FS 技术 RoHS.
JT020N065SED Key Features
- Low gate charge -Trench FS Technology -RoHS product
- pulse （note 1） 二极管正向测试电流 Diode RMS forward current 二极管正向不重复峰值电 流（浪涌电流）Surge non repetitive forward current tp= 10 ms sin
- JT020N065SED/ JT020N065CED
- 连续集电极电流由最高结温限制 -Collector current limited by maximum Junction temperature
- 55～+150
- 55～+175
- 200 nA
- 200 nA
- 1.6 2.0 V