JT020N135WED - N-CHANNEL IGBT

JILIN SINO

Key Features

Low gate charge.
Trench FS Technology,.
Saturation voltage: VCE(sat), typ = 1.7V IC = 20A and Tc = 25°C.
RoHS product ORDER.

JT020N135WED n-channel igbt by JILIN SINO - Datasheet Preview

Datasheet Details

Part number	JT020N135WED
Manufacturer	JILIN SINO
File Size	859.29 KB
Description	N-CHANNEL IGBT
Datasheet	JT020N135WED Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N N-CHANNEL IGBT R JT020N135WED MAIN CHARACTERISTICS IC VCES VCESAT-TYP（VGE=15V） 20 A 1350V 1.7V Package  IH   APPLICATIONS  Induction heating(IH)  Inverterized microwave ovens  Soft switching applications  Trench FS ,  : VCE(sat), typ = 1.7V IC = 20A and Tc = 25°C RoHS FEATURES Low gate charge Trench FS Technology,  Saturation voltage: VCE(sat), typ = 1.