Datasheet Details
| Part number | SPE05M50T-C |
|---|---|
| Manufacturer | JILIN SINO |
| File Size | 1.24 MB |
| Description | Intelligent Power Module |
| Datasheet |
 SPE05M50T-C Datasheet
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General Description
GND IC Common Supply Ground U Bias Voltage for U-Phase High-Side MOSFET Driving U Bias Voltage for U-Phase IC and Low-Side MOSFET Driving U Signal Input for U-Phase High-Side U Signal Input for U-Phase Low-Side No Connection V Bias Voltage for V-Phase High Side MOSFET Driving V Bias Voltage
Key Features
- Signal high level valid, compatible with 3.3v and 5V MCU.
- Lower arm MOSFET source electrode output.
- Built-in bootstrap diode.
- Built-in straight through protection.
- Built-in undervoltage protection.
- Temperature detection: negative temperature coefficient thermistor detection output.
- Resistant to high voltage 1500V PIN1-PIN23 ORDER.