STD10100S Description
沟槽肖特基势垒二极管 R TRENCH SCHOTTKY BARRIER DIODE STD10100S 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 10（2×5）A 100 V 150 ℃ 0.62V （@Tj=125℃） 用途 高频开关电源 低压续流电路和保护电 路 APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity.
STD10100S Key Features
- mon cathode structure
- Low power loss, high efficiency
- High Operating Junction
- Trench MOS Schottky technology，
- RoHS product