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STD10100S - TRENCH SCHOTTKY BARRIER DIODE

Key Features

  • Common cathode structure.
  • Low power loss, high efficiency.
  • High Operating Junction TO-220MF-K1 Temperature.
  • Trench MOS Schottky technology， High reliability.
  • RoHS product ORDER.

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Datasheet Details

Part number STD10100S
Manufacturer JILIN SINO
File Size 1.02 MB
Description TRENCH SCHOTTKY BARRIER DIODE
Datasheet download datasheet STD10100S Datasheet

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Part Number Description
STD2045 TRENCH SCHOTTKY BARRIER DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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R TRENCH SCHOTTKY BARRIER DIODE STD10100S MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 100 V 150 ℃ 0.