TT120U065FQ Overview
N 沟绝缘栅双极晶体管 N-CHANNEL IGBT R TT120U065FQ 主要参数 MAIN CHARACTERISTICS IC VCE VCEsat-typ 120A 650V 1.7V 封装 Package 用途 UPS 储能 光伏 APPLICATIONS Uninterruptible Power Supply Energy Storage photovoltaic 产品特性 低栅极电荷 Trench FS 技术 RoHS 产品 快开关速度 低开关损耗 VCEsat 正温度系数.
TT120U065FQ Key Features
- Low gate charge -Trench FS Technology -RoHS product -Fast switching speed -Low switching losses
- VCEsat with positive temperature coefficient
- 连续集电极电流
- pulse（note 1）
- 二极管正向测试电流
- VCE≤650V，Tvj≤175℃，tp=1us
- 40～+175
- 55～+150
- 连续集电极电流由最高结温限制
- Collector current limited by maximum junction temperature.,and Tc=25°C limited by bondwire