JHQ6058
Features
- Advanced Trench MOS Technology
- Low Gate Charge
- 100% EAS Guaranteed
- Green Device Available
Applications
- Motor Control.
- DC/DC Converter.
- Synchronous Rectifier Applications.
N-Ch 60V Fast Switching MOSFETs
Product Summary
BVDSS
RDSON
60V
15mΩ
29A
DFN 3x3 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case 1
Rating 60
±20 29 18 58 31 25 20.8
-55 to 150 -55 to 150
Units V V A A A m J A W ℃ ℃
Typ. -----
Max. 62 6
Unit ℃/W ℃/W
JINAN JINGHENG ELECTRONICS CO., LTD.
6-1
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