LL4448
FEATURES
Silicon epitaxial planar diode Fast switching diode 500m W power dissipation This diode is also available in the DO-35 case with the type designation 1N4448
MECHANICAL DATA
Case: Min MELF glass case(SOD- 80) Weight: Approx. 0.05gram
Mini Melf
0.063(1.6) 0.055(1.4)
0.142(3.6) 0.134(3.4)
0.019(0.48) 0.011(0.28)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage Non-Repetitive Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25°C and f 50Hz Non-Repetitive Peack Forward Surge Current @t=1.0s Power dissipation at TA=25°C Junction temperature Storage temperature range
ELECTRICAL CHARACTERISTICS
Symbol VR VRM
IFSM Ptot TJ TSTG
Value 75 100
500 500 175 -65 to +175
(Ratings at 25 C ambient temperature unless otherwise specified)
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