LL6263
FEATURES
For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications These diodes are also available in the DO-35 case with type designation 1N5711 and 1N6263. High temperature soldering guaranteed:260°C/10 seconds at terminals ponent in accordance to Ro HS 2011/65/EU
MECHANICAL DATA
Case: Mini MELF glass case(SOD-80 ) Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
LL5711 LL6263
Porwer Dissipation (infinite Heat Sink) Maximum Single cycle surge 10ms square wave Junction temperature Storage Temperature Range
1) Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25°C ambient temperature unless otherwise specified)
Symbols
VRRM VRRM
Ptot IFSM TJ...
