SC1512 Datasheet | JINAN JINGHENG

R SEMICONDUCTOR SILICON CARBIDE SCHOTTKY DIODE Reverse Voltage - 1200 Volts Forward Current - 15.0Amperes DESCRIPTION SIC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over-voltage conditions. Features Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery MECHANICAL DATA Case: JEDEC TO-22OAC Molding pound meets UL94V-0 flammability rating Terminals: Lead solderable per J-STD-002 and JESD22-B102 Polarity: As marked Mounting Torque: 10 in-Ibs maximum TYPICAL APPLICATIONS General Purpose SMPS, Solar inverter, UPS Power Switching Circuits MAXIMUM RATINGS (Ratings at 25°C ambient temperature unless otherwise...