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SC40120PT - SILICON CARBIDE SCHOTTKY DIODE

General Description

SiC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operati

Key Features

  • Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery.

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Datasheet Details

Part number SC40120PT
Manufacturer JINAN JINGHENG
File Size 53.68 KB
Description SILICON CARBIDE SCHOTTKY DIODE
Datasheet download datasheet SC40120PT Datasheet

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R SEMICONDUCTOR SC40120PT SILICON CARBIDE SCHOTTKY DIODE Reverse Voltage - 1200 Volts Forward Current - 40.0Amperes DESCRIPTION SiC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over-voltage conditions.