HF4N65 Overview
Pulse width limited by maximum junction temperature 2. L=27.5mH, IAS=4.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤4.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C.
Datasheet Details
| Part number | HF4N65 |
|---|---|
| Manufacturer | JINGJIAZHEN |
| File Size | 1.80 MB |
| Description | 650V N-Channel MOSFET |
| Datasheet | HF4N65-JINGJIAZHEN.pdf |
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