HF4N65 Description
Pulse width limited by maximum junction temperature 2. L=27.5mH, IAS=4.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤4.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C.
- Part: HF4N65
- Manufacturer: JINGJIAZHEN
- Size: 1.80 MB
HF4N65 is 650V N-Channel MOSFET manufactured by JINGJIAZHEN.
Pulse width limited by maximum junction temperature 2. L=27.5mH, IAS=4.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤4.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C.