HP10N60 Overview
Pulse width limited by maximum junction temperature 2. L=10.56mH, IAS=9.5A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤9.5A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C.
Datasheet Details
| Part number | HP10N60 |
|---|---|
| Manufacturer | JINGJIAZHEN |
| File Size | 1.67 MB |
| Description | 600V N-Channel MOSFET |
| Datasheet | HP10N60-JINGJIAZHEN.pdf |
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