C2331 Description
Silicon Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Base-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=1.0A ,IB=0.1A,L=1mH IC=1A; IB=0.1A IC=1A ;IB=0.1A VCB=100V; VCE=5V 40 40 MIN 100 TYP.