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NPN Silicon General Purpose Transistor
MMBT4401W
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 2 V, IC = 500 mA Collector Cutoff Current at VCB = 35 V Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 0.1 mA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 0.
MMBT4401W Datasheet
