JR MMBD2836
Silicon Epitaxial Planar Switching Diode
| Part No. | MMBD2836 |
|---|---|
| Datasheet | MMBD2836 Download |
| Manufacturer | JR |
| Description | Silicon Epitaxial Planar Switching Diode |
| Buy | Stock & Price |
FEATURES
● Small package● Low forward voltage
● Fast reverse recovery time
● Small total capacitance
APPLICATIONS
● Ultra high speed switching applicationABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range 3 12 Marking Code: A1 SOT-23 Plastic Package MMBD2835 MMBD2836 Symbol VR IF Ptot Tj Tstg Value 35 75 100 350 150 - 55 to + 150 Unit V mA mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA Reverse Current at VR = 30 V at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA Symbol MMBD2835 MMBD2836 VF VF VF IR MMBD2835 MMBD2836 V(BR)R CT trr Min. - - 35 75 - - Max. 1 1 1.2 100 100 - 4 4 Unit V V V nA V pF ns ShangHai JR Electronics.CO.,LTD.