JR25N65 Description
JR25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 650 V ID 24.5 A RDS(ON).Typ 0.23 Ω Qg.Typ 99.
JR25N65 Key Features
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- RoHS product