JR25N65
Description
JR25N65, the silicon N-channel
Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for
SMPS, high speed switching and general purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
VDS@Tj.max
24.5 A
RDS(ON).Typ
0.23 Ω
Qg.Typ
99 n C
FEATURES
- Fast Switching
- Low Crss
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS product
APPLICATIONS
- High frequency switching mode power supply
ORDERING INFORMATION
Ordering Codes Package
JR25N65-W
TO-3PN
JR25N65-F
TO-247
JR25N65-A
(2) Package type (1) Chip name
(1)JR25N65:650V 24.5A (2) W:TO-3PN F:TO-247
Product Code JR25N65
Packing Tube Tube
XXXX YYWW ZZ SSSSS
： XXXX Product Code
： YYWW Year&Week ： ZZ Assembly Code ： SSSSS Lot Code
Rev.1.0
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