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JR25N65
Power MOSFET
1.Description
JR25N65, the silicon N-channel
Enhanced MOSFETs, is obtained by
advanced MOSFET technology which reduce
the conduction loss, improve switching
performance and enhance the avalanche
energy. The transistor is suitable device for
SMPS, high speed switching and general
purpose applications.
KEY CHARACTERISTICS
Parameter Value Unit
VDS@Tj.max
650
V
ID
24.5 A
RDS(ON).Typ
0.23 Ω
Qg.Typ
99
nC
FEATURES
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product
APPLICATIONS
High frequency switching mode power
supply
ORDERING INFORMATION
Ordering Codes Package
JR25N65-W
TO-3PN
JR25N65-F
TO-247
JR25N65-A
(2) Package type (1) Chip name
(1)JR25N65:650V 24.