Datasheet Details
| Part number | DG6N60 |
|---|---|
| Manufacturer | JiangSu Dongchen Electronics |
| File Size | 1.56 MB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Download | DG6N60 Download (PDF) |
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| Part number | DG6N60 |
|---|---|
| Manufacturer | JiangSu Dongchen Electronics |
| File Size | 1.56 MB |
| Description | N-CHANNEL ENHANCEMENT MODE MOSFET |
| Download | DG6N60 Download (PDF) |
|
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DG6N60是N沟道增强型场效应晶体管，应用了东晨电子的相关专利技术，采用自对准平面工艺及先进的 终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产品能应用于多种功率开关电 路，使得电源能效更高，系统更加小型化。 DG6N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics’s proprietary.
The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.
江苏东晨电子科技有限公司 JiangSu Dongchen Electronics Technology Co.,Ltd DG6N60 N 沟道增强型场效应晶体管 N-CHANNEL ENHANCEMENT MODE MOSFET 版本号 201603-A 产品概述.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| DGME | DG6N60 | N-CHANNEL ENHANCEMENT MODE MOSFET | DGME |
| Part Number | Description |
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