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DG6N60 - N-CHANNEL ENHANCEMENT MODE MOSFET

Description

DG6N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics’s proprietary.

The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy.

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Datasheet Details

Part number DG6N60
Manufacturer JiangSu Dongchen Electronics
File Size 1.56 MB
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DG6N60 Datasheet
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    JiangSu Dongchen Electronics Technology Co.,Ltd DG6N60 N N-CHANNEL ENHANCEMENT MODE MOSFET 201603-A General Description DG6N60N，， ，，，。 ，，。 DG6N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 6.0 1.5 11 V A Ω pF Symbol Package 86-510-87136806 1 /13 http://www.jsdgme.com JiangSu Dongchen Electronics Technology Co.
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